Home Contact

ITQW Conference History

The origins of ITQW are as a NATO workshop held in 1991 under the title of “Intersubband Transitions in Quantum Wells.” The core scope of the conference has traditionally been the fundamental physics, device engineering, and applications related to intersubband transitions in III-V quantum wells. Following the success of the original workshop, and amidst the explosion of research surrounding development of quantum-well infrared photodetectors (QWIPs) and quantum-cascade lasers (QCLs), the conference has been held every two years in a rotating venue, organized on a volunteer basis. The conference is traditionally workshop style, with a single track, often held in a retreat style venue to encourage close interactions between the participants.

Previous venues

ITQW 1991 – Cargese, Corsica, France

ITQW 1993 – Whistler, Canada

ITQW 1995 – Ginosar, Israel

ITQW 1997 – Tainan, Taiwan

ITQW 1999 – Bad Ischl, Austria

ITQW 2001 – Asilomar, California

ITQW 2003 – Evolene, Switzerland

ITQW 2005 – Cape Cod, Massachusetts, USA

ITQW 2007 – Cumbria, United Kingdom

ITQW 2009 – Montreal, Canada

ITQW 2011 – Badesi, Sardinia, Italy

ITQW 2013 – Bolton Landing, New York, USA

ITQW 2015 – Vienna, Austria

ITQW 2017 – Singapore

ITQW 2019 in Ojai, California marks the 15th iteration of the conference, and the first iteration with its new name “Infrared Terahertz Quantum Workshop.” The organizing committee has chosen the new name to reflect the natural evolution of topics that has occurred within ITQW over the last several years, as well as to include emerging topics that fall under the central theme of quantum- and electromagnetically-engineered material and device engineering for photonics in the infrared and terahertz. The infrared and terahertz frequency range is particularly interesting for realizing practical devices based on these design principles owing to relaxed fabrication tolerances, low loss of metals, controllable plasmonic and nonlinear optical properties of semiconductors and 2D materials, and our ability to engineer intersubband transitions in semiconductor heterostructures.